Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
نویسندگان
چکیده
منابع مشابه
Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors
Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation sel...
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ژورنال
عنوان ژورنال: Materials
سال: 2018
ISSN: 1996-1944
DOI: 10.3390/ma11030430